Method for Fabricating LED Chip Comprising Reduced Mask Count and Lift-Off Processing

ABSTRACT

A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional application of co-pending U.S. patentapplication Ser. No. 12/252,370, filed Oct. 16, 2008, which claims thepriority benefit of Taiwan application serial no. 97127462, filed onJul. 18, 2008. The entirety of the above-mentioned patent application ishereby incorporated by reference herein and made a part ofspecification.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a method for fabricating a chip, andmore particularly to a method for fabricating a light emitting diodechip.

2. Description of Related Art

FIGS. 1A through 1F show a fabrication flowchart of a conventional lightemitting diode chip. First, a first type semiconductor material layer122, a light emitting material layer 124 and a second type semiconductormaterial layer 126 are sequentially formed on a substrate 110 to furtherform a semiconductor layer 128, as shown by FIG. 1A. A method forforming the semiconductor layer 128 is, for example, a chemical vapordeposition (CVD) process, during which the first type semiconductormaterial layer 122, the light emitting material layer 124 and the secondtype semiconductor material layer 126 are sequentially formed on thesubstrate 110.

Afterwards, the semiconductor layer 128 is patterned to form asemiconductor device layer 120, as shown in FIG. 1B. The semiconductordevice layer 120 is formed by a conventional photolithography andetching process (PEP), for example.

Thereafter, a current blocking layer 130 is formed on an upper surface120 a of the semiconductor device layer 120, as shown by FIG. 1C. Thecurrent blocking layer 130 is formed by a conventional PEP, for example.To give an example, after a dielectric material layer (not shown) isformed entirely on the substrate 110, the dielectric material layer ispatterned to form the current blocking layer 130 as shown by FIG. 1C.

Then, a current spreading layer 140 is formed on the upper surface 120 aof the semiconductor device layer 120 to cover the current blockinglayer 130, as shown by FIG. 1D. The current spreading layer 140 isformed by a conventional PEP, for example. To give an example, aconductive layer (not shown) is first formed entirely on the substrate110 to cover the semiconductor device layer 120 and the current blockinglayer 130. Next, the conductive layer is patterned to form the currentspreading layer 140, as shown by FIG. 1D.

After the foregoing steps are completed, a plurality of electrodes 150is formed on the current spreading layer 140 and the semiconductordevice layer 120, as shown by FIG. 1E. The electrodes 150 are formed bya conventional PEP, for example. To give an example, an electrodematerial layer (not shown) is formed entirely on the current spreadinglayer 140 and the semiconductor device layer 120. Next, the electrodematerial layer is patterned to form the plurality of electrodes 150 onthe current spreading layer 140 and the semiconductor device layer 120,as shown by FIG. 1E.

Then, a passivation layer 160 is formed on the current spreading layer140 and the semiconductor device layer 120 which are not covered by theelectrodes 150, as shown by FIG. 1F. The passivation layer 160 is formedby a conventional PEP, for example. To give an example, a dielectricmaterial layer (not shown) is formed entirely to cover the currentspreading layer 140, the electrodes 150 and the semiconductor devicelayer 120. Then, the dielectric material layer is patterned to form thepassivation layer 160 on the current spreading layer 140 and thesemiconductor device layer 120 which are not covered by the electrodes150, as shown by FIG. 1F. So far, the process steps of the conventionallight emitting diode chip 100 are generally completed.

In view of the foregoing, the method for fabricating the conventionallight emitting diode chip 100 performs at least five mask processes toform a plurality of components respectively, such as the semiconductordevice layer 120, the current blocking layer 130, the current spreadinglayer 140, the electrodes 150 and the passivation layer 160. Thus, thelight emitting diode chip 100, which requires at least five mask photoprocesses to fabricate, needs to use a plurality of masks havingdifferent patterns. Since each of the masks is rather costly, thefabrication cost and the fabrication time of the light emitting diodechip 100 cannot be reduced.

SUMMARY OF THE INVENTION

In light of the foregoing, the present invention provides a method forfabricating a light emitting diode chip. The method applies a half-tonemask process, a gray-tone mask process or a multi-tone mask process, alift-off process or an identical mask process to simultaneously form aplurality of components to reduce the process steps of the lightemitting diode chip and thereby reduce the fabrication cost and thefabrication time.

The present invention provides a method for fabricating a light emittingdiode chip. First, a semiconductor device layer is formed on a substrateand a current spreading layer is formed on the semiconductor devicelayer. Afterwards, a dielectric layer is formed on the substrate tocover the semiconductor device layer and the current spreading layer.Thereafter, a patterned photoresist layer is formed on the dielectriclayer. The patterned photoresist layer includes a first photoresistblock and a second photoresist block. A thickness of the firstphotoresist block is thinner than a thickness of the second photoresistblock. Then, a portion of the dielectric layer is removed using thepatterned photoresist layer as a mask to form a patterned dielectriclayer. The patterned dielectric layer exposes a portion of thesemiconductor device layer and a portion of the current spreading layer.Afterwards, a thickness of the patterned photoresist layer is reduceduntil the first photoresist block is removed completely. Next, anelectrode material layer is formed entirely. Next, the patternedphotoresist layer is removed to strip the electrode material layerthereon to form the plurality of electrodes. The electrodes areelectrically connected with the semiconductor device layer and thecurrent spreading layer.

According to an embodiment of the present invention, the semiconductordevice layer and the current spreading layer are formed by the followingsteps. First, a semiconductor layer is formed on a substrate. Then, thesemiconductor layer is patterned to form a semiconductor device layer.Next, a current spreading layer is formed on the semiconductor devicelayer.

According to an embodiment of the present invention, the semiconductorlayer is formed by the following steps. First, a first typesemiconductor material layer, a light emitting material layer and asecond type semiconductor material layer are sequentially formed on thesubstrate. Afterwards, the first type semiconductor material layer, thelight emitting material layer and the second type semiconductor materiallayer are patterned to form a first type semiconductor device layer, alight emitting layer and a second type semiconductor device layer. Thelight emitting layer is disposed on a portion of the first typesemiconductor device layer, and the second type semiconductor layer isdisposed on the light emitting layer.

According to an embodiment of the present invention, the currentspreading layer is formed by the following steps. First, a conductivelayer is formed on the semiconductor device layer. Then, the conductivelayer is patterned to form the current spreading layer.

According to an embodiment of the present invention, the semiconductordevice layer and the current spreading layer are formed by the followingsteps. First, a semiconductor layer is formed on the substrate. Next, aconductive layer is formed on the semiconductor layer. Then, thesemiconductor layer and the conductive layer are patterned to form thesemiconductor device layer and the current spreading layersimultaneously.

According to an embodiment of the present invention, the semiconductordevice layer and the current spreading layer are formed by the followingsteps. First, a first type semiconductor material layer, a lightemitting material layer, a second type semiconductor material layer anda conductive layer are sequentially formed on the substrate. Next, theconductive layer, the second type semiconductor material layer, thelight emitting material layer and the first type semiconductor materiallayer are patterned to form a first type semiconductor device layer, alight emitting layer, a second type semiconductor device layer and thecurrent spreading layer simultaneously. The light emitting layer isdisposed on a portion of the first type semiconductor layer; the secondtype semiconductor layer is disposed on the light emitting layer, andthe current spreading layer is disposed on the second type semiconductorlayer.

According to an embodiment of the present invention, the photoresistlayer is developed by a half-tone mask process, a gray-tone mask processor a multi-tone mask process.

The present invention further provides a method for fabricating a lightemitting diode chip. First, a semiconductor layer and a conductive layerare sequentially formed on a substrate. Thereafter, a first patternedphotoresist layer is formed on the conductive layer. The first patternedphotoresist layer includes a first photoresist block and a secondphotoresist block. A thickness of the first photoresist block is thinnerthan a thickness of the second photoresist block. Then, a portion of theconductive layer and a portion of the semiconductor layer are removedusing the first patterned photoresist layer as a mask to form asemiconductor device layer. Next, the thickness of the first patternedphotoresist layer is reduced until the first photoresist block iscompletely removed. A portion of the conductive layer is removed usingthe remaining second photoresist block as a mask to form a currentspreading layer. The current spreading layer partially exposes thesemiconductor device layer. Then, the remaining second photoresist blockis removed. Afterwards, a patterned dielectric layer and a plurality ofelectrodes are formed on the current spreading layer and thesemiconductor device layer.

According to an embodiment of the present invention, the currentspreading layer has an opening to expose an upper surface of thesemiconductor device layer. The dielectric layer contacts with the uppersurface of the semiconductor device layer through the opening.

According to an embodiment of the present invention, the electrodes andthe patterned dielectric layer are fabricated by different maskprocesses respectively.

According to an embodiment of the present invention, the patterneddielectric layer and the electrodes are formed by the following steps.First, a dielectric layer is formed on the substrate to cover thesemiconductor device layer and the current spreading layer. Next, asecond patterned photoresist layer is formed on the dielectric layer.Then, a portion of the dielectric layer is removed using the secondpatterned photoresist layer as a mask to form a patterned dielectriclayer. The patterned dielectric layer exposes a portion of thesemiconductor device layer and a portion of the current spreading layer.Next, an electrode material layer is formed entirely. Thereafter, thesecond patterned photoresist layer is removed to strip the electrodematerial layer thereon to form plurality of electrodes. The electrodesare electrically connected with the semiconductor device layer and thecurrent spreading layer.

According to an embodiment of the present invention, the patterneddielectric layer and the electrodes are formed by the following furthersteps. First, a dielectric layer is formed on the substrate to cover thesemiconductor device layer and the current spreading layer. Thereafter,a third patterned photoresist layer is formed on the dielectric layer.The third patterned photoresist layer includes a third photoresist blockand a fourth photoresist block. A thickness of the third photoresistblock is thinner than a thickness of the fourth photoresist block. Then,a portion of the dielectric layer is removed using the third patternedphotoresist layer as a mask to form a patterned dielectric layer. Thepatterned dielectric layer exposes a portion of the semiconductor devicelayer and a portion of the current spreading layer. Afterwards, thethickness of the third patterned photoresist layer is reduced until thethird photoresist block is removed completely. Next, an electrodematerial layer is formed entirely. Thereafter, the third patternedphotoresist layer is removed to strip the electrode material layerthereon to form a plurality of electrodes. The electrodes areelectrically connected with the semiconductor device layer and thecurrent spreading layer.

According to an embodiment of the present invention, the third patternedphotoresist layer is formed by a half-tone mask process, a gray-tonemask process or a multi-tone mask process.

The present invention further provides a method for fabricating a lightemitting diode chip. First, a semiconductor layer and a dielectric layerare sequentially formed on a substrate. Thereafter, a first patternedphotoresist layer is formed on the dielectric layer. The first patternedphotoresist layer includes a first photoresist block and a secondphotoresist block. A thickness of the first photoresist block is thinnerthan a thickness of the second photoresist block. Then, a portion of thedielectric layer and a portion of the semiconductor layer are removedusing the first patterned photoresist layer as a mask to form asemiconductor device layer. Next, the thickness of the first patternedphotoresist layer is reduced until the first photoresist block iscompletely removed. Then, a portion of the dielectric layer is removedusing the remaining second photoresist block as a mask to form apatterned dielectric layer. The patterned dielectric layer partiallyexposes the semiconductor device layer. Then, the remaining secondphotoresist block is removed. Afterwards, a current spreading layer anda plurality of electrodes are formed on the patterned dielectric layerand the semiconductor device layer.

According to an embodiment of the present invention, the currentspreading layer and the electrodes are fabricated by different maskprocesses respectively.

According to an embodiment of the present invention, the method forfabricating the light emitting diode chip further includes forming apassivation layer on the current spreading layer and the semiconductordevice layer which are not covered by electrodes.

According to an embodiment of the present invention, the currentspreading layer and the electrodes are formed by the following steps.First, a current spreading layer is formed on the patterned dielectriclayer and the semiconductor device layer. Afterwards, a passivationlayer is formed on the current spreading layer and the semiconductordevice layer. Then, a second patterned photoresist layer is formed onthe passivation layer. Thereafter, a portion of the passivation layer isremoved using the second patterned photoresist layer as a mask to form apatterned passivation layer. The patterned passivation layer exposes aportion of the semiconductor device layer and a portion of the currentspreading layer. Next, an electrode material layer is formed entirely.Next, the second patterned photoresist layer is removed to strip theelectrode material layer thereon to form a plurality of electrodes. Theelectrodes are electrically connected with the semiconductor devicelayer and the current spreading layer.

The present invention further provides a method for fabricating lightemitting diode chips. First, a semiconductor layer and a conductivelayer are sequentially formed on a substrate. Thereafter, a firstpatterned photoresist layer is formed on the conductive layer. The firstpatterned photoresist layer includes a first photoresist block and asecond photoresist block. a thickness of the first photoresist block isthinner than a thickness of the second photoresist block. Then, aportion of the conductive layer and a portion of the semiconductor layerare removed using the first patterned photoresist layer as a mask toform a semiconductor device layer and a current spreading layer. Next,the thickness of the first patterned photoresist layer is reduced untilthe first photoresist block is removed completely. The remaining secondphotoresist block exposes a portion of the semiconductor device layerand a portion of the current spreading layer. Then, an electrodematerial layer is formed entirely. Thereafter, the remaining secondphotoresist block is removed to strip the electrode material layerthereon and form a plurality of electrodes. The electrodes areelectrically connected with the semiconductor device layer and thecurrent spreading layer.

According to an embodiment of the present invention, the first patternedphotoresist layer is developed by a half-tone mask process, a gray-tonemask process or a multi-tone mask process.

The present invention further provides a method for fabricating a lightemitting diode chip. First, a semiconductor layer, a conductive layerand a dielectric layer are sequentially formed on a substrate.Afterwards, a first patterned photoresist layer is formed on thedielectric layer. The first patterned photoresist layer includes a firstphotoresist block and a second photoresist block. A thickness of thefirst photoresist block is thinner than a thickness of the secondphotoresist block. Then, a portion of the dielectric layer, a portion ofthe conductive layer and a portion of the semiconductor layer areremoved using the first patterned photoresist layer as a mask to form apatterned dielectric layer, a current spreading layer and asemiconductor device layer simultaneously. Next, a thickness of thefirst patterned photoresist layer is reduced until the first photoresistblock is removed completely. The remaining second photoresist blockexposes a portion of the semiconductor device layer and a portion of thepatterned dielectric layer. Then, the patterned dielectric layer ispartially removed using the remaining second photoresist block as a maskto partially expose the current spreading layer. Afterwards, anelectrode material layer is formed entirely. Thereafter, the remainingsecond photoresist block is removed to strip the electrode materiallayer thereon to form a plurality of electrodes. The electrodes areelectrically connected with the semiconductor device layer and thecurrent spreading layer.

According to an embodiment of the present invention, the first patternedphotoresist layer is formed by a half-tone mask process, a gray-tonemask process or a multi-tone mask process.

The present invention also provides a method for fabricating a lightemitting diode chip. First, a semiconductor device layer, a patterneddielectric layer on the semiconductor device layer, and a currentspreading layer on the semiconductor device layer to cover the patterneddielectric layer are sequentially formed on a substrate. Afterwards, adielectric layer is formed on the semiconductor device layer and thecurrent spreading layer. Next, a patterned photoresist layer is formedon the dielectric layer. Then, the dielectric layer is partially removedusing the patterned photoresist layer as a mask to form a patterneddielectric layer. The patterned dielectric layer exposes a portion ofthe semiconductor device layer and a portion of the current spreadinglayer. Afterwards, an electrode material layer is formed entirely. Thepatterned photoresist layer is removed to strip the electrode materiallayer thereon to form a plurality of electrodes. The electrodes areelectrically connected with the semiconductor device layer and thecurrent spreading layer.

According to an embodiment of the present invention, the semiconductordevice layer, the patterned dielectric layer and the current spreadinglayer are formed by the following steps. First, a semiconductor layer isformed on the substrate. Then, the semiconductor layer is patterned toform a semiconductor device layer. Next, a patterned dielectric layer isformed on the semiconductor device layer. Thereafter, a currentspreading layer is formed on the semiconductor device layer to cover thepatterned dielectric layer.

According to an embodiment of the present invention, the semiconductordevice layer, the patterned dielectric layer and the current spreadinglayer are fabricated by different mask processes respectively.

According to an embodiment of the present invention, the semiconductordevice layer, the patterned dielectric layer and the current spreadinglayer are formed by the following steps. First, a semiconductor layer isformed on the substrate. Next, a patterned dielectric layer is formed onthe semiconductor layer. Thereafter, a conductive layer is formed on thesemiconductor layer to cover the patterned dielectric layer. Then, theconductive layer and the semiconductor layer are patterned to form thecurrent spreading layer and the semiconductor device layersimultaneously.

The present invention further provides a method for fabricating a lightemitting diode chip. First, a semiconductor layer and a conductive layerare sequentially formed on a substrate. Then, the semiconductor layerand the conductive layer are patterned to form a semiconductor devicelayer and a current spreading layer simultaneously. Afterwards, apatterned dielectric layer and a plurality of electrodes are formed onthe current spreading layer and the semiconductor device layer.

According to an embodiment of the present invention, the semiconductorlayer is formed by the following steps. A first type semiconductormaterial layer, a light emitting material layer and a second typesemiconductor material layer are sequentially formed on the substrate.

According to an embodiment of the present invention, the electrodes andthe patterned dielectric layer are fabricated by different maskprocesses respectively.

The present invention further provides another method for fabricating alight emitting diode chip. First, a first patterned photoresist layer isformed on a substrate. The first patterned photoresist layer includes afirst photoresist block and a second photoresist block. A thickness ofthe first photoresist block is thinner than a thickness of the secondphotoresist block. Thereafter, a surface of the substrate is partiallyremoved using the first patterned photoresist layer as a mask to form afirst patterned substrate. Next, a thickness of the first patternedphotoresist layer is reduced until the first photoresist block isremoved completely. The remaining second photoresist block partiallyexposes the first patterned substrate. Then, the first patternedsubstrate is partially removed using the remaining second photoresistblock as a mask to form a second patterned substrate. Afterwards, asemiconductor device layer, a current spreading layer and a plurality ofelectrodes are sequentially formed on the second patterned substrate.The electrodes are electrically connected with the semiconductor devicelayer and the current spreading layer.

The present invention further provides yet another method forfabricating light emitting diode chips. First, a patterned photoresistlayer is formed. The patterned photoresist layer includes a firstphotoresist block and a second photoresist block. A thickness of thefirst photoresist block is thinner than a thickness of the secondphotoresist block. The patterned photoresist layer is formed by ahalf-tone mask process, a gray-tone mask process or a multi-tone maskprocess.

According to an embodiment of the present invention, adopting ahalf-tone, gray-tone or multi-tone mask process can reduce the processsteps of the light emitting diode chip. If combined with a lift-offprocess, the process of the light emitting diode chip is furthersimplified. Further, in the present invention, a plurality of componentsmay be formed by the same process, which also saves some steps in theprocess. In other words, the fabricating method of the light emittingdiode chip in the present invention reduces the fabrication cost and thefabrication time.

In order to make the aforementioned and other objects, features andadvantages of the present invention more comprehensible, preferredembodiments accompanied with figures are described in detail below.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the invention, and are incorporated in and constitute apart of this specification. The drawings illustrate embodiments of theinvention and, together with the description, serve to explain theprinciples of the invention.

FIGS. 1A through 1F show a flowchart of fabricating a conventional lightemitting diode chip.

FIGS. 2A through 2I are schematic diagrams showing a flowchart offabricating a light emitting diode chip according to the firstembodiment of the present invention.

FIGS. 3A through 3E show a flowchart of fabricating a light emittingdiode chip according to another mode of embodiment of the presentinvention.

FIGS. 4A through 4G show a flowchart of fabricating a light emittingdiode chip according to yet another mode of embodiment of the presentinvention.

FIGS. 5A through 5G show a flowchart of fabricating a light emittingdiode chip according to still another mode of embodiment of the presentinvention.

FIGS. 6A through 6H show a schematic flowchart of fabricating a lightemitting diode chip according to the second embodiment of the presentinvention.

FIGS. 7A through 7E show a flowchart of fabricating a light emittingdiode chip according to another mode of embodiment for the secondembodiment of the present invention.

FIGS. 8A through 8F show a schematic flowchart of fabricating a lightemitting diode chip according to the third embodiment of the presentinvention.

FIGS. 9A through 9E show a flowchart of fabricating a light emittingdiode chip according to another mode of embodiment for the thirdembodiment of the present invention.

FIGS. 10A and 10B show a flowchart of fabricating a light emitting diodechip according to yet another mode of embodiment for the thirdembodiment of the present invention.

FIGS. 11A through 11D show a flowchart of fabricating a light emittingdiode chip according to a mode of embodiment for the third embodiment ofthe present invention.

FIGS. 12A through 12F show a flowchart of fabricating a light emittingdiode chip according to another mode of embodiment for the thirdembodiment of the present invention.

FIGS. 13A through 13E show a flowchart of fabricating a light emittingdiode chip according to yet another mode of embodiment for the thirdembodiment of the present invention.

FIGS. 14A through 14I show a schematic flowchart of fabricating a lightemitting diode chip according to the fourth embodiment of the presentinvention.

FIGS. 15A through 15F show a schematic flowchart of fabricating a lightemitting diode chip according to another mode of embodiment for thefourth embodiment of the present invention.

FIGS. 16A through 16F show a schematic flowchart of fabricating a lightemitting diode chip according to the fifth embodiment of the presentinvention.

FIGS. 17A through 17F show a schematic flowchart of fabricating a lightemitting diode chip according to the sixth embodiment of the presentinvention.

FIGS. 18A through 18H show a flowchart of fabricating a light emittingdiode chip according to the seventh embodiment of the present invention.

FIGS. 19A through 19F show a flowchart of fabricating a light emittingdiode chip according to another mode of embodiment for the seventhembodiment of the present invention.

FIGS. 20A through 20D show a flowchart of fabricating a light emittingdiode chip according to the eighth embodiment of the present invention.

FIGS. 21A and 21B are schematic diagrams of light emitting diode chipsaccording to different modes of embodiment for the eighth embodiment ofthe present invention.

FIGS. 22A through 22G show a flowchart of fabricating a semiconductordevice layer.

FIGS. 23A through 23D show a schematic flowchart of a mask process.

FIGS. 24A through 24D are schematic views of substrates fabricated bymask processes in other modes of embodiment.

DESCRIPTION OF EMBODIMENTS The First Embodiment

FIGS. 2A through 2I show a schematic flowchart of fabricating a lightemitting diode chip according to the first embodiment of the presentinvention. First, a first type semiconductor material layer 222, a lightemitting material layer 224 and a second type semiconductor materiallayer 226 are sequentially formed on a substrate 210 to further form asemiconductor layer 228, as shown by FIG. 2A. The semiconductor layer228 is formed, for example, by a metal organic chemical vapor deposition(MOCVD) process, a molecular beam epitaxial (MBE) process, or othersuitable epitaxial growth processes, to sequentially form the saidmaterial layers 222, 224 and 226 on the substrate 210. The presentembodiment is exemplified by an MOCVD process as an example ofembodiment but not limited thereto. According to the present embodiment,a material of the substrate 210 is aluminum oxide with goodtransmittance, for example. Furthermore, to give some examples, amaterial selected for the first type semiconductor material layer 222may be an N-type semiconductor material; a material selected for thelight emitting material layer 224 may be a multiple quantum well (MQW)light emitting material, and a material selected for the second typesemiconductor material layer 226 may be a P-type semiconductor material.However, the materials for the first type semiconductor material layer222 and the second type semiconductor material layer 226 may also be aP-type semiconductor material and an N-type semiconductor materialrespectively.

Afterwards, the semiconductor layer 228 is patterned to form asemiconductor device layer 220, as shown by FIG. 2B. According to thepresent embodiment, the semiconductor device layer 220 is formed, forexample, by a conventional photolithography and etching process (PEP).For example, after the semiconductor layer 228 is formed on thesubstrate 210, the second type semiconductor material layer 222, thelight emitting material layer 224 and the first type semiconductormaterial layer 226 are patterned to form a first type semiconductorlayer 222 a, a light emitting layer 224 a and a second typesemiconductor layer 226 a. The light emitting layer 224 a is disposed ona portion of the first type semiconductor layer 222 a, and the secondtype semiconductor layer 226 a is disposed on the light emitting layer224 a, as shown by FIG. 2B. According to the present embodiment, thefirst type semiconductor layer 222 a, the light emitting layer 224 a andthe second type semiconductor layer 226 a constitute the semiconductordevice layer 220.

Afterwards, a current spreading layer 230 is formed on the semiconductordevice layer 220, as shown by FIG. 2C. According to the presentembodiment, the current spreading layer 230 is formed, for example, by aconventional PEP. To give an example, after the semiconductor devicelayer 220 is formed on the substrate 210, a conductive layer (not shown)is formed entirely on the semiconductor device layer 220. Then, theconductive layer is patterned to form the current spreading layer 230.The current spreading layer 230 has an opening 232 to expose an uppersurface 220 a of the semiconductor device layer 220, as shown by FIG.2C. According to the present embodiment, the opening 232 may be acircular opening, an annular opening or an opening in other shapes.Moreover, a material of the current spreading layer 230 is, for example,indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide(ITZO), hafnium oxide, zinc oxide, aluminum oxide, aluminum tin oxide,aluminum zinc oxide, cadmium tin oxide, cadmium zinc oxide or othersuitable materials. The present embodiment is exemplified by ITO as anexample for embodiment but not limited thereto.

Thereafter, a dielectric layer 240 is formed on the substrate 210 tocover the semiconductor device layer 220 and the current spreading layer230. The dielectric layer 240 contacts with the upper surface 220 a ofthe semiconductor device layer 220 through the opening 232, as shown byFIG. 2D. According to the present embodiment, the dielectric layer 240is formed, for example, by a chemical vapor deposition (CVD) process,but the present embodiment is not limited to this. Other suitableprocesses may also be used, such as a screen printing process, a coatingprocess or an inkjet printing process. The dielectric layer 240 may be asingle-layered or a multi-layered structure, and a material of thedielectric layer 240 can be classified as an organic or an inorganicmaterial. An organic material is, for example, silicon oxide, siliconnitride, silicon oxynitride, silicon carbide, hafnium oxide, aluminumoxide or other suitable materials. An inorganic material is, forexample, photoresist, benzocyclobutene, cycloalkene, polyimide,polyamide, polyester, polyester polyol, polyethylene oxide,polyphenylene, resin, polyether, polyketide or other suitable materials.The present embodiment is exemplified by silicon dioxide or siliconnitride but not limited thereto.

Then, a patterned photoresist layer 250 is formed on the dielectriclayer 240, as shown by FIG. 2E. The patterned photoresist layer 250 isformed, for example, by a half-tone mask process, a gray-tone maskprocess or a multi-tone mask process. The present embodiment isexemplified by a half-tone mask process as an example for embodiment butnot limited thereto. For example, a photoresist material layer (notshown) is formed entirely on the dielectric layer 240 first. Afterwards,the photoresist material layer is patterned by a half-tone mask processto form the patterned photoresist layer 250. The patterned photoresistlayer 250 includes a first photoresist block 252 and a secondphotoresist block 254. A thickness h1 of the first photoresist block 252is thinner than a thickness h2 of the second photoresist block 254, asshown by FIG. 2E.

Then, the dielectric layer 240 is partially removed using the patternedphotoresist layer 250 as a mask to form a patterned dielectric layer260, as shown by FIG. 2F. The patterned dielectric layer 260 is formedby using a dry etching process or a wet etching process to partiallyremove the dielectric layer 240 such that a portion of the semiconductordevice layer 220 and a portion of the current spreading layer 230 areexposed, as shown by FIG. 2F. The said method of partially removing thedielectric layer 240 is only described as an example, and other suitableetching processes may also be adopted.

Thereafter, a thickness of the patterned photoresist layer 250 isreduced, for example, by a plasma ashing process until the firstphotoresist block 252 is removed completely to form a structure as shownby FIG. 2G.

After the foregoing step is completed, then an electrode material layer270 is formed entirely on the substrate 210, as shown by FIG. 2H. Theelectrode material layer 270 is formed, for example, by CVD, asmentioned above, sputtering, evaporation or other suitable processes.

Next, the patterned photoresist layer 250 is removed to strip theelectrode material layer 270 thereon and form a plurality of electrodes272. The electrodes 272 are electrically connected with thesemiconductor device layer 220 and the current spreading layer 230, asshown by FIG. 2I. To give an example, the patterned photoresist layer250 is removed to form the plurality of electrodes 272 by a lift-offprocess so as to complete a structure as shown by FIG. 2I. Specifically,when the patterned photoresist layer 250 is removed, the electrodematerial layer 270 covering the patterned photoresist layer 250 is alsoremoved simultaneously. As a result, the electrode material layer 270forms the plurality of electrodes 272 as shown by FIG. 2I. Up to thisstep, a fabrication flowchart of a light emitting diode chip 200 isgenerally completed.

In the light emitting diode chip 200, the patterned dielectric layer 260covered by the electrodes 272 is defined as a current blocking layer,and the patterned dielectric layer 260 not covered by the electrodes 272is defined as a passivation layer. In detail, when the light emittingdiode chip 200 is emitting the light, the current blocking layer issuitable for exciting a more even light from the light emitting layer sothat the light emitting diode chip 200 has better light emitting.Moreover, the passivation layer is suitable for preventing thesemiconductor device layer from being damaged or oxidized by influencesof the exterior environment and then affecting electricalcharacteristics of the light emitting diode chip 200 when emitting thelight.

According to the present embodiment, the process steps of the lightemitting diode chip 200 adopt a half-tone mask process and a lift-offprocess to form the passivation layer, the current blocking layer andthe electrodes. Only one mask pattern is required to complete thefabrication. In other words, the said fabricating method of the lightemitting diode chip 200 effectively reduces the fabrication cost and thefabrication time.

According to a mode of embodiment, the foregoing process steps may beadjusted to form light emitting diode chips in other modes ofembodiment. A detailed description thereof is provided below.

FIGS. 3A through 3E show a flowchart of fabricating a light emittingdiode chip according to another mode of embodiment of the presentinvention. First, a light emitting diode chip 200 a is formed byapplying the process steps as shown by FIGS. 2A through 2D first; arelevant description thereof is not repeated herein.

After completing the foregoing step, a patterned photoresist layer 250 ais formed on the dielectric layer 240, as shown by FIG. 3A. Thepatterned photoresist layer 250 a is formed, for example, by a half-tonemask process, a gray-tone mask process or a multi-tone mask process. Thepresent embodiment is exemplified by a half-tone mask process as anexample for embodiment but not limited thereto. For example, aphotoresist material layer (not shown) is formed entirely on thedielectric layer 240 first. Afterwards, the photoresist material layeris patterned by a half-tone mask process to form the patternedphotoresist layer 250 a. The patterned photoresist layer 250 a includesa first photoresist block 252 and a second photoresist block 254. Athickness h1 of the first photoresist block 252 is thinner than athickness h2 of the second photoresist block 254, as shown by FIG. 3A.It should be noted that the patterned photoresist layer 250 a and thepatterned photoresist layer 250 have similar structures. The differencebetween the two lies in that an opening 256 between the firstphotoresist blocks 252 partially exposes the dielectric layer 240, asshown by FIG. 3A. According to the present embodiment, only a mask isrequired to be adjusted in order to form the patterned photoresist layer250 a, and no additional exposing and developing process are needed.

Thereafter, referring to FIGS. 3B through 3E in sequence, since theprocess steps shown by FIGS. 3B through 3E are similar to those shown byFIGS. 2F through 2I, a relevant description of the process is notrepeated herein. According to the present embodiment, the structure ofthe patterned photoresist layer 250 a is different from that of thepatterned photoresist layer 250. Hence, the structure of the lightemitting diode chip 200 a formed by completing the process steps shownby FIGS. 3B through 3E is also different from that of the light emittingdiode chip 200, as shown by FIGS. 2I and 3E.

In detail, since the opening 256 exists between the first photoresistblocks 252, the patterned dielectric layer 260 is suitable for exposingan upper surface 220 a of a second type semiconductor layer 226 a in thesemiconductor device layer 220, as shown by FIG. 3B. Consequently, whenthe plurality of electrodes 272 is formed on the substrate 210, someelectrodes 272 are suitable for being electrically connected with thesecond type semiconductor layer 226 a of the semiconductor device layer220 directly through the patterned dielectric layer 260 (such as theabove-defined current blocking layer), as shown by FIG. 3E.

According to the present embodiment, the process steps of the lightemitting diode chip 200 a are the same as those of the light emittingdiode chip 200, and the only slight difference exists in the maskpatterns used for forming the patterned photoresist layers. Therefore,the process steps of the light emitting diode chip 200 a can also reducethe process steps, cost and time of the light emitting diode chip.

Moreover, FIGS. 4A through 4G show a flowchart of fabricating a lightemitting diode chip according to yet another mode of embodiment of thepresent invention. First, a light emitting diode chip 200 b may beformed by performing the process steps as shown by FIGS. 2A and 2B. Arelevant description of the fabrication is the same as that mentionedabove.

Afterwards, a current spreading layer 230 a is formed on thesemiconductor device layer 220, as shown by FIG. 4A. According to thepresent embodiment, the current spreading layer 230 a is formed, forexample, by a conventional PEP. A relevant description is the same asthat mentioned in the foregoing embodiment and thus not repeated herein.According to the present embodiment, the current spreading layer 230 ahas a plurality of openings 232 a to expose an upper surface 220 a ofthe semiconductor device layer 220, as shown by FIG. 4A. Referring toFIGS. 4A and 2C to compare structures of the current spreading layers230 a and 230, in other words, only the mask pattern of the currentspreading layer 230 is required to be adjusted to complete thefabrication of the current spreading layer 230 a, and no additionalexposing and developing processes are needed.

Thereafter, a dielectric layer 240 is formed on the substrate 210 tocover the semiconductor device layer 220 and the current spreading layer230 a. The dielectric layer 240 contacts with the upper surface 220 a ofthe semiconductor device layer 220 through the opening 232 a, as shownby FIG. 4B. According to the present embodiment, the dielectric layer240 is formed in the same way as described in the foregoing embodimentand a description is thus not repeated.

Afterwards, referring to FIGS. 4C through 4G in sequence, the processsteps shown by FIGS. 4C through 4G are similar to those shown by FIGS.3A through 3E, and a description of the relevant process is thus notrepeated. According to the present embodiment, the structure of thecurrent spreading layer 230 a is different from that of the currentspreading layer 230.

Hence, the structure of the light emitting diode chip 200 b formed bycompleting the process steps shown by FIGS. 4A through 4G is alsodifferent from the structures of the light emitting diode chips 200 and200 a, as shown by FIGS. 2I, 3E, and 4G.

Specifically, the current spreading layer 230 a has the plurality ofopenings 232 a and the patterned dielectric layer 260 is suitable forpartially exposing the current spreading layer 230 a, as shown by FIG.4D. Thus, when the plurality of electrodes 272 is formed on thesubstrate 210, some electrodes 272 are suitable for being electricallyconnected with the current spreading layer 230 a directly, as shown byFIG. 4G.

According to the present embodiment, the process steps of the lightemitting diode chip 200 b are the same as those of the light emittingdiode chip 200 or 200 a, and just only slight difference exists in themask patterns used for forming the current spreading layers. In otherwords, the fabricating method of the light emitting diode chip 200 balso reduces the process steps, cost and time of the light emittingdiode chip.

Moreover, FIGS. 5A through 5G show a flowchart of fabricating a lightemitting diode chip according to still another mode of embodiment of thepresent invention. First, a light emitting diode chip 200 c may beformed by performing the process steps as shown by FIGS. 2A and 2B. Therelevant process is the same as that mentioned above.

Afterwards, a current spreading layer 230 b is formed on thesemiconductor device layer 220, as shown by FIG. 5A. According to thepresent embodiment, the current spreading layer 230 b is formed, forexample, by a conventional PEP. The relevant process is the same as thatmentioned above and is not repeated herein. According to the presentembodiment, the current spreading layer 230 b covers an upper surface220 a of the semiconductor device layer 220, as shown by FIG. 5A. Inother words, only the mask pattern is required to be adjusted to formthe current spreading layer 230 b, and no additional exposing anddeveloping processes are needed.

Next, a dielectric layer 240 is formed on the substrate 210 to cover thesemiconductor device layer 220 and the current spreading layer 230 b, asshown by FIG. 5B. According to the present embodiment, the dielectriclayer 240 is formed in the same way as described in the foregoingembodiment and thus a description thereof is not repeated.

Afterwards, referring to FIGS. 5C through 5G in sequence, since theprocess steps shown by FIGS. 5C through 5G are similar to those shown byFIGS. 2E through 2I, a description of the relevant process is thus notrepeated. According to the present embodiment, the appearance of thecurrent spreading layer 230 b is different from those of the currentspreading layers 230 and 230 a. Therefore, the structure of the lightemitting diode chip 200 c formed by completing the process steps shownby FIGS. 5B through 5G is also different from the structures of thelight emitting diode chips 200, 200 a and 200 b, as shown by FIGS. 2I,3E, 4G and 5G.

In the light emitting diode chip 200 c, the current spreading layer 230b covers the upper surface 220 a of the second type semiconductor layer226 a in the semiconductor device layer 220, and the patterneddielectric layer 260 is suitable for partially exposing the currentspreading layer 230 a, as shown by FIG. 5E. Thus, when the plurality ofelectrodes 272 is formed on the substrate 210, a part of the electrodes272 are suitable for being electrically connected with the currentspreading layer 230 b directly, as shown by FIG. 5G.

Likewise, the patterned dielectric layer 260 covered by the electrodes272 is defined as the current blocking layer, and the patterneddielectric layer 260 not covered by the electrodes 272 is defined as thepassivation layer. According to the present embodiment, since only themask pattern used for forming the current spreading layer is slightlyadjusted, the original process steps would not be changed. In otherwords, the fabricating method of the light emitting diode chip 200 c hasthe same advantages as the light emitting diode chips 200, 200 a and 200b.

In summary, in the fabricating steps of the light emitting diode chips200, 200 a, 200 b and 200 c, a half-tone mask process, a gray-tone maskprocess or a multi-tone mask process is applied and combined with alift-off process to reduce the process steps for forming the currentblocking layer, the passivation layer or the electrodes to furtherreduce the fabrication time and the fabrication cost of the lightemitting diode chip.

The Second Embodiment

FIGS. 6A through 6H show a schematic flowchart of fabricating a lightemitting diode chip according to the second embodiment of the presentinvention. First, a first type semiconductor material layer 322, a lightemitting material layer 324, a second type semiconductor material layer326 and a conductive layer 332 are sequentially formed on a substrate310 to further form a semiconductor layer 328 and the conductive layer332 on the semiconductor layer 328 respectively, as shown by FIG. 6A.The semiconductor layer 328 and the conductive layer 332 formed on thesemiconductor layer 328 are used the following methods, for example,MOCVD, MBE, evaporation, sputtering or other suitable epitaxial growthprocesses to sequentially form the material layers 322, 324, 326 and theconductive layer 332 on the substrate 310. In the present embodiment, anMOCVD process is used as an example for the mode of embodiment, but thepresent embodiment is not limited thereto. According to the presentembodiment, the substrates 310 and 210 have the same material, and thematerial layers 322, 324 and 326 are the same as the material layers222, 224 and 226 in the foregoing embodiment. A relevant description ofthe material layers is thus not repeated.

Afterwards, the semiconductor layer 328 and the conductive layer 332 arepatterned to form a semiconductor device layer 320 and a currentspreading layer 330 simultaneously, as shown by FIG. 6B. According tothe present embodiment, the semiconductor device layer 320 and thecurrent spreading layer 330 are formed, for example, by a conventionalPEP. To give an example, after forming the semiconductor layer 328 andthe conductive layer 332 on the substrate 310, the second typesemiconductor material layer 322, the light emitting material layer 324,the first type semiconductor material layer 326 and the conductive layer332 are patterned to form a first type semiconductor device layer 322 a,a light emitting layer device 324 a, a second type semiconductor devicelayer 326 a and the current spreading layer 330 simultaneously. Thelight emitting layer 324 a is disposed on the partial area of the firsttype semiconductor layer 322 a; the second type semiconductor layer 326a is disposed on the light emitting layer 324 a, and the currentspreading layer 330 is disposed on the second type semiconductor layer326 a, as shown by FIG. 6B. According to the present embodiment, thefirst type semiconductor layer 322 a, the light emitting layer 324 a andthe second type semiconductor layer 326 a constitute the semiconductordevice layer 320.

Next, a dielectric layer 340 is formed on the substrate 310 to cover thesemiconductor device layer 320 and the current spreading layer 330, asshown by FIG. 6C. According to the present embodiment, the dielectriclayer 340 is formed, for example, by a CVD process, but the presentembodiment is not limited thereto. Other suitable processes may also beused, such as a screen printing process, a coating process, an inkjetprinting process or an energy source treatment process. The dielectriclayer 340 may be a single-layered or a multi-layered structure, and amaterial of the dielectric layer 340 can be classified as an organic oran inorganic material. An organic material is, for example, siliconoxide, silicon nitride, silicon oxynitride, silicon carbide, hafniumoxide, aluminum oxide or other suitable materials. An inorganic materialis, for example, photoresist, benzocyclobutene, cycloalkene, polyimide,polyamide, polyester, polyester polyol, polyethylene oxide,polyphenylene, resin, polyether, polyketide or other suitable materials.The present embodiment is exemplified by silicon dioxide or siliconnitride but not limited to these examples.

Then, a patterned photoresist layer 350 is formed on the dielectriclayer 340, as shown by FIG. 6D. The patterned photoresist layer 350 isformed, for example, by a half-tone mask process, a gray-tone maskprocess or a multi-tone mask process. The present embodiment isexemplified by a half-tone mask process as an example for embodiment butnot limited thereto. To give an example, a photoresist material layer(not shown) is formed entirely on the dielectric layer 340 first.Afterwards, the photoresist material layer is patterned by a half-tonemask process to form the patterned photoresist layer 350. The patternedphotoresist layer 350 includes a first photoresist block 352 and asecond photoresist block 354. A thickness h1 of the first photoresistblock 352 is thinner than a thickness h2 of the second photoresist block354, as shown by FIG. 6D.

Then, the dielectric layer 340 is partially removed using the patternedphotoresist layer 350 as a mask to form a patterned dielectric layer360, as shown by FIG. 6E. The patterned dielectric layer 360 is formed,for example, by partially removing the dielectric layer 340 with a dryetching process or a wet etching process to expose a portion of thesemiconductor device layer 320 and a portion of the current spreadinglayer 330, as shown by FIG. 6E. The step of partially removing thedielectric layer 340 is described above as an example only, and othersuitable etching processes may also be adopted.

Thereafter, the thickness of the patterned photoresist layer 350 isreduced, for example, by a plasma ashing process until the firstphotoresist block 352 is removed entirely to form a structure as shownby FIG. 6F.

After completing the foregoing steps, an electrode material layer 370 isformed entirely on the substrate 310, as shown by FIG. 6G. The electrodematerial layer 370 is formed, for example, by CVD, as mentioned above,sputtering, evaporation or other suitable processes.

Next, the patterned photoresist layer 350 is removed to strip theelectrode material layer 370 thereon and form a plurality of electrodes372. The electrodes 372 are electrically connected with thesemiconductor device layer 320 and the current spreading layer 330, asshown by FIG. 6H. For example, the patterned photoresist layer 350 maybe removed to form the plurality of electrodes 372 by a lift-off processto complete a structure as shown by FIG. 6H. Specifically, when thepatterned photoresist layer 350 is removed, the electrode material layer370 covering the patterned photoresist layer 350 is also removedsimultaneously. As a result, the electrode material layer 370 forms theplurality of electrodes 372 as shown by FIG. 6H. Up to this step, aprocess of a light emitting diode chip 300 is generally completed.

Likewise, in the light emitting diode chip 300, the patterned dielectriclayer 360 covered by the electrodes 372 is defined as the currentblocking layer, and the patterned dielectric layer 360 not covered bythe electrodes 372 is defined as the passivation layer. In detail, whenthe light emitting diode chip 300 emits light, the current blockinglayer is suitable for exciting a more even light from the light emittinglayer so that the light emitting diode chip 300 has better lightemitting efficiency. Furthermore, the passivation layer is suitable forpreventing the semiconductor device layer from being damaged or oxidizedby influences of the exterior environment and then affecting electricalcharacteristics of the light emitting diode chip 300 when emits light.

It should be noted that the light emitting diode chips 300 and 200 chave the same structures. The difference between the two lies in thatone mask patterning process is performed to fabricate the semiconductordevice layer 320 and the current spreading layer 330 simultaneously onthe substrate 310 of the light emitting diode chip 300, while two maskpatterning processes are performed to fabricate the semiconductor devicelayer 320 and the current spreading layer 330 respectively on thesubstrate 310 of the light emitting diode chip 200 c.

Similarly, if a mask pattern of the patterned photoresist layer is adifferent pattern, the light emitting diode chip 300 may further beformed as another light emitting diode chip. A detailed description isprovided below.

FIGS. 7A through 7E show a flowchart of fabricating a light emittingdiode chip according to another mode of embodiment for the secondembodiment of the present invention. First, a light emitting diode chip300 a is formed by the process steps as shown by FIGS. 6A through 6C; arelevant description is not repeated herein.

After completing the aforesaid steps, a patterned photoresist layer 350a is formed on the dielectric layer 340, as shown by FIG. 7A. Thepatterned photoresist layer 350 a is formed, for example, by a half-tonemask process, a gray-tone mask process or a multi-tone mask process. Thepresent embodiment is exemplified by a half-tone mask process as anexample for embodiment but not limited thereto. For example, aphotoresist material layer (not shown) is formed entirely on thedielectric layer 340. Afterwards, the photoresist material layer ispatterned by a half-tone mask process to form the patterned photoresistlayer 350 a. The patterned photoresist layer 350 a includes a firstphotoresist block 352 and a second photoresist block 354. A thickness h1of the first photoresist block 352 is thinner than a thickness h2 of thesecond photoresist block 354, as shown by FIG. 7A. It should be notedthat the fabricating method of the patterned photoresist layer 350 a issimilar to that of the patterned photoresist layer 350. The differencebetween the two fabricating methods lies in that a plurality of openings356 exists between the first photoresist blocks 352 of the patternedphotoresist layer 350 a to partially expose the dielectric layer 340, asshown by FIG. 7A. In order to form the patterned photoresist layer 350a, only the mask pattern needs to be adjusted and no additional exposingand developing processes are required.

Thereafter, referring to FIGS. 7B through 7E in sequence, since theprocess steps shown by FIGS. 7B through 7E are the same as those shownby FIGS. 6E through 6H, the description of the relevant process is notrepeated. According to the present embodiment, the patterned photoresistlayer 350 a is different from the patterned photoresist layer 350.Hence, the structure of the light emitting diode chip 300 a formed bycompleting the process steps shown by FIGS. 7B through 7E is alsodifferent from the structure of the above light emitting diode chip 300mentioned, as shown by FIGS. 6H and 7E.

Similarly, in the light emitting diode chip 200 a, a plurality ofopenings 356 exists between the patterned photoresist layers 350 a. Thepatterned dielectric layer 360 is suitable for partially exposing thecurrent spreading layer 330, as shown by FIG. 7B. Thus, when theplurality of electrodes 372 is formed on the substrate 310, someelectrodes 372 are suitable for being electrically connected with acurrent spreading layer 330 a directly, as shown by FIG. 7E.

In addition, the patterned dielectric layer 360 covered by theelectrodes 372 is defined as the current blocking layer, and thepatterned dielectric layer 360 not covered by the electrodes 372 isdefined as the passivation layer. Therefore, when the light emittingdiode chip 300 a is driven, the current blocking layer is suitable forexciting a more even light from the light emitting layer so that thelight emitting diode chip 300 a has better light emitting uniformity.Moreover, similarly, only one mask patterning process is performed tofabricate the semiconductor device layer 320 and the current spreadinglayer 330 simultaneously on the substrate 310 of the light emittingdiode chip 300 a.

In view of the aforementioned, in the process steps of the lightemitting diode chips 300 and 300 a, a half-tone mask process, agray-tone mask process or a multi-tone mask process is performed and alift-off process is selectively applied to incorporate the process stepsof the current blocking layer, the passivation layer or the electrodes.Further, the process steps of the light emitting diode chips 300 and 300a further incorporate the steps of forming the semiconductor devicelayer 320 and the current spreading layer 330 into one mask patterningprocess to further simplify the steps of fabricating the light emittingdiode chip. Hence, the light emitting diode chips 300 and 300 a onlyrequire two mask patterning processes to complete their fabrication andthereby significantly reducing the fabrication time and the fabricationcost of the light emitting diode chip.

The Third Embodiment

FIGS. 8A through 8F show a schematic flowchart of fabricating a lightemitting diode chip according to the third embodiment of the presentinvention. First, a first type semiconductor material layer 422, a lightemitting material layer 424, a second type semiconductor material layer426 and a conductive layer 432 are sequentially formed on a substrate410 to further form a semiconductor layer 428 and a conductive layer 432on the semiconductor layer 428 respectively, as shown by FIG. 8A.According to the present embodiment, the semiconductor layer 428 and theconductive layer 432 thereon are formed, for example, by MOCVD, MBE,evaporation, sputtering or other suitable epitaxial growth processes tosequentially form the material layers 422, 424, 426 and the conductivelayer 432 on the substrate 410. The present embodiment is exemplified byan MOCVD process as an example for embodiment but not limited thereto.According to the present embodiment, the substrates 410 and 210 have thesame material, and the material layers 422, 424 and 426 are the same asthe material layers 222, 224 and 226 in the foregoing embodiment. Arelevant description thereof is thus not repeated herein.

Afterwards, a first patterned photoresist layer 450 is formed on theconductive layer 432, as shown by FIG. 8B. The first patternedphotoresist layer 450 is formed, for example, by a half-tone maskprocess, a gray-tone mask process or a multi-tone mask process. Thepresent embodiment is exemplified by a half-tone mask process as anexample for embodiment but not limited thereto. For example, aphotoresist material layer (not shown) is formed entirely on theconductive layer 432. Afterwards, the photoresist material layer ispatterned by a half-tone mask process to form the first patternedphotoresist layer 450. The first patterned photoresist layer 450includes a first photoresist block 452 and a second photoresist block454. A thickness h1 of the first photoresist block 452 is thinner than athickness h2 of the second photoresist block 454, as shown by FIG. 8B.

Then, a portion of the conductive layer 432 and a portion of thesemiconductor layer 428 are removed using the first patternedphotoresist layer 450 as a mask to form a semiconductor device layer420, as shown by FIG. 8C. According to the present embodiment, theconductive layer 432 and the semiconductor layer 428 are partiallyremoved, for example, by a dry etching process, a wet etching process orother suitable etching processes. A description of the relevant processis the same as that mentioned in the foregoing embodiment.

Thereafter, a thickness of the first patterned photoresist layer 450 isreduced by a plasma ashing process until the first photoresist block 452is removed completely. The conductive layer 432 is partially removedusing the remaining second photoresist block 454 as a mask to form acurrent spreading layer 430. The current spreading layer 430 partiallyexposes the semiconductor device layer 420 to form a structure as shownby FIG. 8D. The conductive layer 432 is partially removed to form thecurrent spreading layer 430 by a dry etching process, a wet etchingprocess or other suitable etching processes, for example. A descriptionof the relevant process is the same as that mentioned in the foregoingembodiment.

Afterwards, the remaining second photoresist block 454 is removed toform a patterned dielectric layer 460 and a plurality of electrodes 472on the current spreading layer 430 and the semiconductor device layer420, as shown by FIGS. 8E and 8F. According to the present embodiment,the patterned dielectric layer 460 and the plurality of electrodes 472may be fabricated by a conventional PEP. For example, in the presentembodiment, the patterned dielectric layer 460 is first formed by a PEP,as shown by FIG. 8E. Next, another PEP is applied to form the pluralityof electrodes 472, as shown by FIG. 8F. Up to this step, the process ofa light emitting diode chip 400 is generally completed.

In the light emitting diode chip 400, the patterned dielectric layer 460covered by the electrodes 472 is defined as a current blocking layer,and the patterned dielectric layer 460 not covered by the electrodes 472is defined as a passivation layer. When the light emitting diode chip400 is driven, the current blocking layer is suitable for exciting amore even light from the light emitting layer so that the light emittingdiode chip 400 has better light emitting uniformity. Furthermore, thepassivation layer is suitable for preventing the semiconductor devicelayer from being damaged or oxidized by influences of the exteriorenvironment and then affecting electrical characteristics of the lightemitting diode chip 400 when driven.

According to the present embodiment, the process steps of the lightemitting diode chip 400 include forming the semiconductor layer and theconductive layer sequentially on the substrate and performing ahalf-tone mask process with one mask pattern to form the semiconductordevice layer and the current spreading layer. Then, a PEP process isused to form the passivation layer and the current blocking layerrespectively. Thereafter, another PEP is further applied to form theelectrodes. In other words, the said fabricating method of the lightemitting diode chip 400 only applies three mask patterning processes andthereby effectively reduces the fabrication cost and the fabricationtime.

According to an embodiment, if the mask pattern used to form the firstpatterned photoresist layer 450 has a different mode of embodiment,another light emitting diode chip 400 a can be formed. A detaileddescription is provided below.

FIGS. 9A through 9E show a flowchart of fabricating another lightemitting diode chip according to the third embodiment of the presentinvention. First, the process steps as shown by FIGS. 8A are performedto fabricate the light emitting diode chip 400 a; a relevant descriptionis not repeated herein.

Afterwards, a first patterned photoresist layer 450 a is formed on theconductive layer 432, as shown by FIG. 9A. According to the presentembodiment, the first patterned photoresist layer 450 a is formed, forexample, by a half-tone mask process, a gray-tone mask process or amulti-tone mask process. The present embodiment is exemplified by ahalf-tone mask process as an example for embodiment but not limitedthereto. For example, a photoresist material layer (not shown) is formedentirely on the conductive layer 432. Afterwards, the photoresistmaterial layer is patterned by a half-tone mask process to form thefirst patterned photoresist layer 450 a. The first patterned photoresistlayer 450 a includes a first photoresist block 452 and a secondphotoresist block 454. A thickness h1 of the first photoresist block 452is thinner than a thickness h2 of the second photoresist block 454, asshown by FIG. 9A. It should be noted that the first patternedphotoresist layer 450 a and the first patterned photoresist layer 450have similar structures, and the difference between the two layers liesin that the first patterned photoresist layer 450 a has a plurality offirst photoresist blocks 452, as shown by FIG. 9A. According to thepresent embodiment, in order to form the first patterned photoresistlayer 450 a, only the mask pattern is required to be adjusted, and noadditional exposing and developing processes are needed.

Thereafter, referring to FIGS. 9B through 9E in sequence, since theprocess steps shown by FIGS. 9B through 9E are similar to those shown byFIGS. 8C through 8F, a relevant description of the process is notrepeated herein. According to the present embodiment, the structure ofthe first patterned photoresist layer 450 a is different from thestructure of the patterned photoresist layer 450. Hence, the structureof the light emitting diode chip 400 a formed by completing the processsteps shown by FIGS. 9A through 9E is also different from the structureof the light emitting diode chip 400, as shown by FIGS. 8F and 9E.

The light emitting diode chips 400 a and 400 only differ in shapes ofsome components. Therefore, the fabricating method of the light emittingdiode chip 400 a also has the same advantages as that of the lightemitting diode chip 400. A relevant description is thus omitted.

In addition, a different patterned dielectric layer and differentelectrodes formed by different mask patterning processes also cause thelight emitting diode chip 400 a to be formed as another light emittingdiode chip. A relevant description follows below.

FIGS. 10A and 10B show a flowchart of fabricating a light emitting diodechip according to yet another mode of embodiment for the thirdembodiment of the present invention. First, the process steps as shownby FIGS. 8A, 9A and 9C are performed in sequence to form a lightemitting diode chip 400 b; a description of the relevant process is notrepeated.

After completing the foregoing steps, the remaining second photoresistblock 454 is removed to form a patterned dielectric layer 460 a and aplurality of electrodes 472 a on the current spreading layer 430 and thesemiconductor device layer 420, as shown by FIGS. 10A and 10B. Accordingto the present embodiment, the patterned dielectric layer 460 a and theplurality of electrodes 472 a are formed in the same way as described inthe foregoing. A description of the relevant process is thus notrepeated herein.

According to the present embodiment, referring to FIGS. 9D, 9E, 10A and10B simultaneously, the structures of the patterned dielectric layer 460a and the electrodes 472 a are similar to the structures of thepatterned dielectric layer 460 and the electrodes 472. The differencebetween them lies in that the mask pattern used for forming thepatterned dielectric layer 460 a and the electrodes 472 a is differentfrom the mask pattern used for forming the patterned dielectric layer460 and the electrodes 472.

Therefore, comparing the light emitting diode chip 400 b with the lightemitting diode chip 400, they only differ in that the patterneddielectric layer 460 a and the electrodes 472 a have a different shapeand position. The fabricating method of the light emitting diode chip400 b likewise has the same advantages as that of the light emittingdiode chip 400 a does, and a relevant description thereof is thusomitted.

According to another embodiment, the process steps are further reducedby applying again a half-tone mask process combined with a process toform a plurality of components synchronically. The process steps ofthree different modes of embodiment are given as examples in thefollowing.

FIGS. 11A through 11D show a flowchart of fabricating a light emittingdiode chip according to a mode of embodiment for the third embodiment ofthe present invention. First, the process steps as shown by FIGS. 8A, 9Aand 9C are performed in sequence to form a light emitting diode chip 400c; a description of the relevant process is omitted.

After completing the foregoing steps, the remaining second photoresistblock 454 is removed to form a dielectric layer 440 to cover thesemiconductor device layer 420 and the current dispersion 430 on thesubstrate 410. Next, a second patterned photoresist layer 480 is formedon the dielectric layer 440, as shown by FIG. 11A. The secondphotoresist block 454 is removed to form the dielectric layer 440 andfurther form the second patterned photoresist layer 480 by the samefabricating method as mentioned in the foregoing embodiment. Adescription of the relevant process is not repeated herein.

Then, the dielectric layer 440 is partially removed using the secondpatterned photoresist layer 480 as a mask to form a patterned dielectriclayer 460 b. The patterned dielectric layer 460 b exposes a portion ofthe semiconductor device layer 420 and a portion of the currentspreading layer 430, as shown by FIG. 11B.

Thereafter, an electrode material layer 470 is formed entirely on thesubstrate 410, as shown by FIG. 11C. The electrode material layer 470 isformed by the same fabricating method as mentioned in the foregoingembodiment and a relevant description thereof is thus not repeatedherein.

Next, the second patterned photoresist layer 480 is removed to strip theelectrode material layer 470 thereon and form the plurality ofelectrodes 472. The electrodes 472 are electrically connected with thesemiconductor device layer 420 and the current spreading layer 430, asshown by FIG. 11D. The second patterned photoresist layer 480 is removedto form the plurality of electrodes 472, for example, by a lift-offprocess to complete a structure as shown by FIG. 11D. For a descriptionof the relevant process please refer to the relevant description in theforegoing embodiment. Up to this step, the process of the light emittingdiode chip 400 c is generally completed.

According to the present embodiment, the light emitting diode chips 400c and 400 b have the same structures. The difference between the twolies in that the light emitting diode chip 400 c is fabricated by ahalf-tone mask process and a lift-off process to be combined with theprocess steps of the patterned dielectric layer 460 b and the electrodes472. In other words, the process of the light emitting diode chip 400 conly requires two mask patterning processes to complete its processsteps. In the fabricating method of the light emitting diode chip 400 b,a PEP is performed on the patterned dielectric layer 460 b and theelectrodes 472 respectively. Therefore, it takes three mask patterningprocesses to form the light emitting diode chip 400 b. Please refer tothe process steps of the light emitting diode chips 400 b and 400 csimultaneously for details.

FIGS. 12A through 12F show a flowchart of fabricating a light emittingdiode chip according to another mode of embodiment for the thirdembodiment of the present invention. First, the process steps as shownby FIGS. 8A through 8D are performed to fabricate a light emitting diodechip 400 d; a relevant description is thus not repeated.

After completing the foregoing steps, the remaining second photoresistblock 454 is removed to form a dielectric layer 440 to cover thesemiconductor device layer 420 and the current spreading layer 430 onthe substrate 410, as shown by FIG. 12A. According to the presentembodiment, the second photoresist block 454 is removed to form thedielectric layer 440 in the same way as that described in the foregoingembodiment, and thus a relevant description is not repeated herein.

Thereafter, a third patterned photoresist layer 490 is formed on thedielectric layer 440. The third patterned photoresist layer 490 includesa third photoresist block 492 and a fourth photoresist block 494. Athickness h3 of the third photoresist block 492 is thinner than athickness h4 of the fourth photoresist block 494, as shown by FIG. 12B.According to the present embodiment, the third patterned photoresistlayer 490 is formed, for example, by a half-tone mask process, agray-tone mask process or a multi-tone mask process. The presentembodiment is exemplified by a half-tone mask process as an example forembodiment but not limited thereto. To give an example, a photoresistmaterial layer (not shown) may be first formed entirely on thedielectric layer 440. Next, the photoresist material layer is patternedby a half-tone mask process to form the third patterned photoresistlayer 490, as shown by FIG. 12B.

Then, the dielectric layer 440 is partially removed using the thirdpatterned photoresist layer 490 as a mask to form a patterned dielectriclayer 460 b. The patterned dielectric layer 460 b exposes a portion ofthe semiconductor device layer 420 and a portion of the currentspreading layer 430, as shown by FIG. 12C. According to the presentembodiment, the dielectric layer 440 is removed to form the patterneddielectric layer 460 b by a dry etching process, as aforementioned, awet etching process or other suitable etching processes, for example.Please refer to the foregoing embodiment for a relevant description.

Thereafter, a thickness of the third patterned photoresist layer 490 isreduced by a plasma ashing process until the third photoresist block 492is removed completely, as shown by FIG. 12D. According to the presentembodiment, the plasma ashing process is the same as that described inthe foregoing embodiment and thus not repeated herein.

Afterwards, an electrode material layer 470 is formed entirely on thesubstrate 410, and the third patterned photoresist layer 490 (i.e., theremaining fourth photoresist block 494) is removed to strip theelectrode material layer 470 on the third patterned photoresist layer490 and form a plurality of electrodes 472. The electrodes 472 areelectrically connected with the semiconductor device layer 420 and thecurrent spreading layer 430, as shown by FIGS. 12E and 12F. According tothe present embodiment, the electrode material layer 470 is formed by aCVD process, for example, and a detailed description thereof is the sameas that in the foregoing embodiment. In addition, the third patternedphotoresist layer 490 may be removed to form the electrodes 472 by theaforesaid lift-off process. Likewise, a detailed description of theprocess can be referred to the foregoing embodiment and is thus omittedherein. Up to this step, the process of the light emitting diode chip400 d is generally completed.

Specifically, the light emitting diode chips 400 and 400 d arefabricated by similar fabricating methods. The difference between thetwo lies in that the light emitting diode chip 400 d is fabricated by ahalf-tone mask process and a lift-off process to incorporate the processsteps of the patterned dielectric layer 460 b (or named as the currentblocking layer and the passivation layer) and the electrodes 472. Thepatterned dielectric layer 460 b covered by the electrodes 472 isdefined as the current blocking layer, and the patterned dielectriclayer 460 b not covered by the electrodes 472 is defined as thepassivation layer.

Thus, the process steps of the light emitting diode chip 400 d onlyrequire two mask patterning processes. In the process steps of the lightemitting diode chip 400, a PEP is performed respectively to form thepatterned dielectric layer 460 (or named as the current blocking layerand the passivation layer) and the electrodes 472. Therefore, theprocess steps of the light emitting diode chip 400 needs to apply threePEPs. Please also refer to the process steps of both the light emittingdiode chips 400 and 400 d for relevant descriptions.

Moreover, in the process steps of the light emitting diode chip 400 d,if the mask pattern of the third patterned photoresist layer 490 isanother mode of embodiment, for example, correspondingly a lightemitting diode chip of another mode of embodiment would be formed aftercompleting the foregoing process steps. A relevant description isprovided as follows.

FIGS. 13A through 13E show a flowchart of fabricating a light emittingdiode chip according to yet another mode of embodiment for the thirdembodiment of the present invention. The process steps as shown by FIGS.8A through 8D and 12A are performed in sequence to fabricate a lightemitting diode chip 400 e; a description of the relevant process is notrepeated.

After completing the foregoing steps, a third patterned photoresistlayer 490 a is formed on the dielectric layer 440. The third patternedphotoresist layer 490 a includes a third photoresist block 492 and afourth photoresist block 494. A thickness h3 of the third photoresistblock 492 is thinner than a thickness h4 of the fourth photoresist block494, as shown by FIG. 13A. According to the present embodiment, thethird patterned photoresist layer 490 a is formed in the same way as thethird patterned photoresist layer 490. A description of the relevanttechnology is thus omitted. It should be noted that the thirdphotoresist block 492 a has an opening 496 which exposes the dielectriclayer 440.

Referring to FIGS. 13B through 13E in sequence, since the fabricatingmethod shown by FIGS. 13B through 13E is similar to that shown by FIGS.12B through 12E, a relevant description thereof is thus not repeatedherein. According to the present embodiment, the structure of the thirdpatterned photoresist layers 490 a is different from that of the thirdpatterned photoresist layer 490. Hence, the structure of the lightemitting diode chip 400 e formed by completing the process steps shownby FIGS. 13B through 13E is also different from that of the lightemitting diode chip 400 d, as shown by FIGS. 12E and 13E.

Similarly, the fabricating methods of the light emitting diode chips 400e and 400 d are similar. The difference between the two methods is thatthe mask design in the fabricating method of the light emitting diodechip 400 e is altered, and the process steps are thus not affected as awhole. Hence, only two mask patterning processes are required tocomplete the process steps of the light emitting diode chip 400 e.

In summary, in the fabricating method of the light emitting diode chip,a half-tone mask process, a gray-tone mask process or a multi-tone maskprocess is performed a number of times and combined selectively with alift-off process to simplify the process steps of the light emittingdiode chip and thereby effectively reduce the fabrication cost and thefabrication time.

The Fourth Embodiment

FIGS. 14A through 14I show a schematic flowchart of fabricating a lightemitting diode chip according to the fourth embodiment of the presentinvention. First, a first type semiconductor material layer 522, a lightemitting material layer 524, a second type semiconductor material layer526 and a dielectric layer 540 are sequentially formed on a substrate510 to further form a semiconductor layer 528 and a dielectric layer 540on the semiconductor layer 528 respectively, as shown by FIG. 14A. Thesemiconductor layer 528 and the dielectric layer 540 thereon are formed,for example, by MOCVD, MBE, evaporation, sputtering, CVD or othersuitable epitaxial growth processes to sequentially form the materiallayers 522, 524, 526 and the dielectric layer 540 on the substrate 510.The present embodiment is exemplified by an MOCVD process as an examplefor embodiment but not limited thereto. According to the presentembodiment, the substrates 510 and 210 have the same material, and thematerial layers 522, 524 and 526 are the same as the material layers222, 224 and 226 in the foregoing embodiment. A relevant description isthus omitted.

Thereafter, a first patterned photoresist layer 550 is formed on thedielectric layer 540. The first patterned photoresist layer 550 includesa first photoresist block 552 and a second photoresist block 554. Athickness h1 of the first photoresist block 552 is thinner than athickness h2 of the second photoresist block 554, as shown by FIG. 14B.The first patterned photoresist layer 550 is formed, for example, by ahalf-tone mask process, a gray-tone mask process or a multi-tone maskprocess. The present embodiment is exemplified by a half-tone maskprocess as an example for embodiment but not limited thereto. To give anexample, a photoresist material layer (not shown) may be first formedentirely on the dielectric layer 540. Next, the photoresist materiallayer is patterned by a half-tone mask process to form the firstpatterned photoresist layer 550, as shown by FIG. 14B.

Then, a portion of the dielectric layer 540 and a portion of thesemiconductor layer 528 are removed using the first patternedphotoresist layer 550 as a mask to form a semiconductor device layer520, as shown by FIG. 14C. According to the present embodiment, thedielectric layer 540 and the semiconductor layer 528 are partiallyremoved, for example, by a dry etching process, a wet etching process orother suitable etching processes. A description of the relevant processis the same as that mentioned in the foregoing embodiment.

Next, a thickness of the first patterned photoresist layer 550 isreduced until the first photoresist block 552 is removed completely. Thedielectric layer 540 is partially removed using the remaining secondphotoresist block 554 as a mask to form a patterned dielectric layer560. The patterned dielectric layer 560 partially exposes thesemiconductor device layer 520, as shown by FIGS. 14D and 14E. Accordingto the present embodiment, the first photoresist block 552 is removed,for example, by a plasma ashing process as aforementioned. A relevantdescription thereof is the same as the description in the foregoingembodiment and is thus omitted herein. The dielectric layer 540 may bepartially removed to form the patterned dielectric layer 560 by a dryetching process, a wet etching process or other suitable etchingprocesses. A relevant description of the process can be referred to thedescription of the foregoing embodiment and is thus not repeated herein.

Afterwards, after the remaining second photoresist block 554 on thesubstrate 510 is removed, a current spreading layer 530 and a pluralityof electrodes 572 are formed on the patterned dielectric layer 560 andthe semiconductor device layer 520 respectively, as shown by FIGS. 14Fthrough 14H. For example, after the second photoresist block 554 isremoved, the current spreading layer 530 is formed first by aconventional PEP, as shown by FIG. 14G. Next, the plurality ofelectrodes 572 is formed by performing another PEP, as shown by FIG.14H. The PEP technology is the same as that described in the foregoingembodiment and thus not repeated herein.

Afterwards, a passivation layer 590 is formed on the current spreadinglayer 530 and the semiconductor device layer 520 not covered by theelectrodes 572, as shown by FIG. 14I. According to the presentembodiment, the passivation layer 590 is formed, for example, by thesaid PEP. A description of the relevant process technology is the sameas that mentioned in the foregoing embodiment and thus not repeatedherein. Up to this step, the process of a light emitting diode chip 500is generally completed.

According to the present embodiment, in the fabricating method of thelight emitting diode chip 500, a half-tone mask process is performed toincorporate the process steps of the current blocking layer (i.e., thepatterned dielectric layer 560) and the semiconductor device layer 520as one mask patterning process. Next, three mask patterning processesare then performed to form the current spreading layer 530, theelectrodes 572 and the passivation layer 590 respectively. Therefore,the said fabricating method of the light emitting diode chip 500effectively reduces the fabrication cost and the fabrication time.

According to another embodiment, the process steps may be furtherreduced by applying again a half-tone mask process along with a processto synchronically form a plurality of components. The process steps ofanother mode of embodiment are described as an example in the following.

FIGS. 15A through 15F show a schematic flowchart of fabricating a lightemitting diode chip according to another mode of embodiment for thefourth embodiment of the present invention. First, the process steps asshown by FIGS. 14A through 14F are performed to fabricate a lightemitting diode chip 500 a; a relevant description is not repeatedherein.

After completing the foregoing steps, the current spreading layer 530 isformed on the patterned dielectric layer 560 and the semiconductordevice layer 520, as shown by FIG. 15A. According to the presentembodiment, the current spreading layer 530 is formed, for example, by aconventional PEP. A description of the relevant process is the same asthat mentioned in the foregoing embodiment and thus not repeated herein.

Thereafter, a passivation layer 590 is formed on the current spreadinglayer 530 and the semiconductor device layer 520, and a second patternedphotoresist layer 580 is formed on the passivation layer 590, as shownby FIGS. 15B and 15C. According to the present embodiment, thepassivation layer 590 is formed by CVD, evaporation, sputtering or othersuitable processes, for example. Additionally, the second patternedphotoresist layer 580 is formed a half-tone mask process, a gray-tonemask process or a multi-tone mask process, for example. A description ofthe relevant process is the same as the description in theaforementioned and thus not repeated herein. The present embodiment isexemplified by a half-tone mask process as an example for embodiment butnot limited thereto.

Next, the passivation layer 590 is partially removed using the secondpatterned photoresist layer 580 as a mask to form a patternedpassivation layer 592. The patterned passivation layer 592 exposes aportion of the semiconductor device layer 520 and a portion of thecurrent spreading layer 530, as shown by FIG. 15D. According to thepresent embodiment, the passivation layer 590 is removed to form thepatterned passivation layer 592 by a dry etching process, a wet etchingprocess or other suitable etching processes, for example.

Then, after an electrode material layer 570 is formed entirely, thesecond patterned photoresist layer 580 is removed to strip the electrodematerial layer 570 thereon and form a plurality of electrodes 572. Theelectrodes 572 are electrically connected with the semiconductor devicelayer 520 and the current spreading layer 530, as shown by FIGS. 15E and15F. According to the present embodiment, the electrode material layer570 is formed by CVD, evaporation, sputtering or other suitableprocesses, for example. A description of the relevant process technologyis the same as the description in the foregoing embodiment and thus notrepeated herein. Furthermore, the second patterned photoresist layer 580is removed to form the plurality of electrodes 572 by a lift-offprocess, for example. A description of the relevant process technologyis the same as the description in the foregoing embodiment and thus notrepeated herein. Up to this step, a process of a light emitting diodechip 500 a in another mode of embodiment is generally completed.

According to the present embodiment, the fabricating method of the lightemitting diode chip 500 a is similar to that of the light emitting diodechip 500. The difference between the two lies in that the fabricatingmethod of the light emitting diode chip 500 a applies a half-tone maskphoto process and a lift-off process and incorporates the process stepsof the electrodes 572 and the passivation layer 590 as one PEP. Hence,to complete fabrication of the light emitting diode chip 500 a onlyrequires three mask patterning processes and in turn effectively reducesthe fabrication cost and the fabrication time.

The Fifth Embodiment

FIGS. 16A through 16F show a schematic flowchart of fabricating a lightemitting diode chip according to the fifth embodiment of the presentinvention. First, a first type semiconductor material layer 622, a lightemitting material layer 624, a second type semiconductor material layer626, a conductive layer 632 and a dielectric layer 640 are sequentiallyformed on a substrate 610 to further form a semiconductor layer 628, aconductive layer 632 on the semiconductor layer 628 and a dielectriclayer 640 on the conductive layer 632 respectively, as shown by FIG.16A. The semiconductor layer 628, the conductive layer 632 and thedielectric layer 640 are formed, for example, by MOCVD, MBE,evaporation, sputtering, CVD or other suitable epitaxial growthprocesses to sequentially form the material layers 622, 624, 626, theconductive layer 632 and the dielectric layer 640 on the substrate 610.The present embodiment is exemplified by an MOCVD process as an examplefor embodiment but not limited thereto. According to the presentembodiment, the substrates 610 and 210 have the same material, and thematerial layers 622, 624 and 626 are the same as the material layers222, 224 and 226 in the foregoing embodiment. A relevant descriptionthereof is thus omitted.

Thereafter, a first patterned photoresist layer 650 is formed on thedielectric layer 640. The first patterned photoresist layer 650 includesa first photoresist block 652 and a second photoresist block 654. Athickness h1 of the first photoresist block 652 is thinner than athickness h2 of the second photoresist block 654, as shown by FIG. 16B.According to the present embodiment, the first patterned photoresistlayer 650 is formed, for example, by a half-tone mask process, agray-tone mask process or a multi-tone mask process. The presentembodiment is exemplified by a half-tone mask process as an example forembodiment but not limited thereto. To give an example, a photoresistmaterial layer (not shown) may be first formed entirely on thedielectric layer 640. Next, the photoresist material layer is patternedby a half-tone mask process to form the first patterned photoresistlayer 650, as shown by FIG. 16B.

Next, a portion of the dielectric layer 640, a portion of the conductivelayer 632 and a portion of the semiconductor layer 628 are removed usingthe first patterned photoresist layer 650 as a mask to form a patterneddielectric layer 660, a current spreading layer 630 and a semiconductordevice layer 620 simultaneously, as shown by FIG. 16C. According to thepresent embodiment, the dielectric layer 640, the conductive layer 632and the semiconductor layer 628 are partially removed by a dry etchingprocess, a wet etching process or other suitable etching processes, forexample. The above processes are only listed as examples, and thepresent embodiment is not limited thereto.

Then, a thickness of the first patterned photoresist layer 650 isreduced by a plasma ashing process until the first photoresist block 652is removed completely, for example. The remaining second photoresistblock 654 exposes a portion of the semiconductor device layer 620 and aportion of the patterned dielectric layer 660, as shown by FIG. 16D.

Afterwards, the patterned dielectric layer 660 is partially removedusing the remaining second photoresist block 654 as a mask to partiallyexpose the current spreading layer 630, as shown by FIG. 16E. Accordingto the present embodiment, the patterned dielectric layer 660 is removedby a dry etching process, a wet etching process and other suitableetching processes, for example. A relevant description thereof is thesame as the description in the foregoing embodiment and thus notrepeated herein.

Then, an electrode material layer (not shown) is formed entirely, andthe remaining second photoresist block 654 is removed to strip theelectrode material layer 670 thereon and form a plurality of electrodes672. The electrodes 672 are electrically connected with thesemiconductor device layer 620 and the current spreading layer 630, asshown by FIG. 16F. According to the present embodiment, the electrodematerial layer 670 is formed by CVD, evaporation, sputtering or othersuitable processes, for example. A description of the relevant processtechnology is the same as the description in the foregoing embodimentand thus not repeated herein. Furthermore, the second photoresist block654 is removed to form the plurality of electrodes 672 by a lift-offprocess, for example. A description of the relevant process technologyis the same as the description in the foregoing embodiment and thus notrepeated herein. Up to this step, the process of a light emitting diodechip 600 is generally completed.

According to the present embodiment, the light emitting diode chip 600is fabricated by a process coordinated with a half-tone mask process anda lift-off process to form a plurality of components synchronically,such as a semiconductor device layer, a current spreading layer, apassivation layer, a current blocking layer and electrodes. Hence, theprocess steps of the light emitting diode chip 600 require only one maskpatterning process to complete the fabrication and thereby greatlyreduce the fabrication time and the fabrication cost.

The Sixth Embodiment

FIGS. 17A through 17F show a schematic flowchart of fabricating a lightemitting diode chip according to the sixth embodiment of the presentinvention. First, a first type semiconductor material layer 722, a lightemitting material layer 724, a second type semiconductor material layer726 and a conductive layer 732 are sequentially formed on a substrate710 to further form a semiconductor layer 728 and a conductive layer 732on the semiconductor layer 728 respectively, as shown by FIG. 17A. Thesemiconductor layer 728 and the conductive layer 732 are formed, forexample, by MOCVD, MBE, evaporation, sputtering or other suitableepitaxial growth processes to sequentially form the material layers 722,724, 726 and the conductive layer 732 on the substrate 710. The presentembodiment is exemplified by an MOCVD process as an example forembodiment but not limited thereto. According to the present embodiment,the substrates 710 and 210 have the same material, and the materiallayers 722, 724 and 726 are the same as the material layers 222, 224 and226 in the foregoing embodiment. A relevant description is thus omitted.

Thereafter, a first patterned photoresist layer 750 is formed on theconductive layer 732. The first patterned photoresist layer 750 includesa first photoresist block 752 and a second photoresist block 754. Athickness h1 of the first photoresist block 752 is thinner than athickness h2 of the second photoresist block 754, as shown by FIG. 17B.According to the present embodiment, the first patterned photoresistlayer 750 is formed, for example, by a half-tone mask process, agray-tone mask process or a multi-tone mask process. The presentembodiment is exemplified by a half-tone mask process as an example forembodiment but not limited thereto. For example, a photoresist materiallayer (not shown) may be first formed entirely on the conductive layer732. Next, the photoresist material layer is patterned by a half-tonemask process to form the first patterned photoresist layer 750, as shownby FIG. 17B.

Then, a portion of the conductive layer 732 and a portion of thesemiconductor layer 728 are removed using the first patternedphotoresist layer 750 as a mask to form a current spreading layer 730and a semiconductor device layer 720 simultaneously, as shown by FIG.17C. According to the present embodiment, the conductive layer 732 andthe semiconductor layer 728 are removed by a dry etching process, a wetetching process or other suitable etching processes, for example. Theabove processes are only listed as examples, and the present embodimentis not limited thereto.

Then, a thickness of the first patterned photoresist layer 750 isreduced by a plasma ashing process until the first photoresist block 752is removed completely. The remaining second photoresist block 754exposes a portion of the semiconductor device layer 720 and a portion ofthe current spreading layer 730, as shown by FIG. 17D.

Then, an electrode material layer 770 is formed entirely, and theremaining second photoresist block 754 is removed to strip the electrodematerial layer 770 thereon and form a plurality of electrodes 772. Theelectrodes 772 are electrically connected with the semiconductor devicelayer 720 and the current spreading layer 730, as shown by FIGS. 17E and17F. According to the present embodiment, the electrode material layer770 is formed by CVD, evaporation, sputtering or other suitableprocesses, for example. A description of the relevant process technologyis the same as the description in the foregoing embodiment and thus notrepeated herein. Furthermore, the second photoresist block 754 isremoved to form the plurality of electrodes 772 by a lift-off process,for example. A description of the relevant process technology is thesame as the description in the foregoing embodiment and thus notrepeated herein. Up to this step, the process of a light emitting diodechip 700 is generally completed.

According to the present embodiment, the light emitting diode chip 700is fabricated by a process coordinated with a half-tone mask process anda lift-off process to form a plurality of components synchronically,such as a semiconductor device layer, a current spreading layer, apassivation layer, a current blocking layer and electrodes. Hence, theprocess steps of the light emitting diode chip 700 require only one maskpatterning process to complete the fabrication and thus greatly reducethe fabrication time and the fabrication cost.

The Seventh Embodiment

FIGS. 18A through 18H show a flowchart of fabricating a light emittingdiode chip according to the seventh embodiment of the present invention.First, a first type semiconductor material layer 822, a light emittingmaterial layer 824, a second type semiconductor material layer 826 and adielectric layer 840 are sequentially formed on a substrate 810 tofurther form a semiconductor layer 828, as shown by FIG. 18A. Thesemiconductor layer 828 is formed, for example, by MOCVD, MBE,evaporation, sputtering or other suitable epitaxial growth processes tosequentially form the material layers 822, 824 and 826 on the substrate810. The present embodiment is exemplified by an MOCVD process as anexample for embodiment but not limited thereto. According to the presentembodiment, the substrates 810 and 210 have the same material, and thematerial layers 822, 824 and 826 are the same as the material layers222, 224 and 226 in the foregoing embodiment. A relevant descriptionthereof is thus omitted.

Afterwards, the semiconductor layer 828 is patterned to form asemiconductor device layer 820, as shown by FIG. 18B. According to thepresent embodiment, the semiconductor device layer 820 is formed, forexample, by a conventional PEP. A description of the relevant processtechnology is the same as the description in the foregoing embodimentand thus not repeated herein.

Afterwards, a patterned dielectric layer 860 is formed on the substrate810. The patterned dielectric layer 860 is disposed on the semiconductordevice layer 820, as shown by FIG. 18C. According to the presentembodiment, the patterned dielectric layer 860 is formed, for example,by a conventional PEP. A description of the relevant process technologyis the same as the description in the foregoing embodiment and thus notrepeated herein.

Next, a current spreading layer 830 is formed on the substrate 810. Thecurrent spreading layer 830 is disposed on the semiconductor devicelayer 820 to cover the patterned dielectric layer 860, as shown by FIG.18D. The current spreading layer 830 is formed, for example, by aconventional PEP. A description of the relevant process technology isthe same as the description in the foregoing embodiment and thus notrepeated herein.

Then, a dielectric layer 840 is formed on the semiconductor device layer820 and the current spreading layer 830, and a patterned photoresistlayer 850 is formed on the dielectric layer 840, as shown by FIG. 18E.According to the present embodiment, the dielectric layer 840 is formed,for example, by a CVD process, but the present embodiment is not limitedthereto. Other suitable processes may also be used, such as a screenprinting process, a coating process, an inkjet printing process or anenergy source treatment process. The patterned photoresist layer 850 isformed, for example, by a traditional photo mask process, a half-tonemask process, a gray-tone mask process or a multi-tone mask process. Thepresent embodiment is exemplified by a traditional photo mask process asan example for embodiment but not limited thereto.

Then, the dielectric layer 840 is partially removed using the patternedphotoresist layer 850 as a mask to form a patterned dielectric layer 860a. The patterned dielectric layer 860 a exposes a portion of thesemiconductor device layer 820 and a portion of the current spreadinglayer 830, as shown by FIG. 18F. According to the present embodiment,the dielectric layer 840 is removed in the same way as described in theforegoing embodiment and thus not repeated herein.

Then, an electrode material layer 870 is formed entirely, and thepatterned photoresist layer 850 is removed to strip the electrodematerial layer 870 thereon and form a plurality of electrodes 872. Theelectrodes 872 are electrically connected with the semiconductor devicelayer 820 and the current spreading layer 830, as shown by FIGS. 18G and18H. According to the present embodiment, the electrode material layer870 is formed by CVD, evaporation, sputtering or other suitableprocesses, for example. A description of the relevant process technologyis the same as the description in the foregoing embodiment and thus notrepeated herein. Furthermore, the patterned photoresist layer 850 isremoved to form the electrodes 872 by a lift-off process, for example. Adescription of the relevant process technology is the same as thedescription in the foregoing embodiment and thus not repeated herein. Upto this step, the process of a light emitting diode chip 800 isgenerally completed.

According to the present embodiment, the light emitting diode chip 800first applies three PEPs to fabricate the semiconductor device layer820, the patterned dielectric layer 860 (or termed as the currentblocking layer) and the current spreading layer 830. Afterwards, ahalf-tone mask process and a lift-off process are performed to becombined with the process steps of the dielectric layer 840 (or termedas the passivation layer) and the electrodes 872 such that the processsteps of the light emitting diode chip 800 only requires four PEPs.

In addition, if the fabrication of some layers is adjusted to combined,one more PEP is further reduced from the process steps of the lightemitting diode chip 800. A description of the relevant mode ofembodiment is provided below.

FIGS. 19A through 19F show a flowchart of fabricating a light emittingdiode chip according to another mode of embodiment for the seventhembodiment of the present invention. First, a light emitting diode chip800 a is fabricated by the process steps as shown by FIG. 18A. Arelevant description thereof is not repeated herein.

Next, a patterned dielectric layer 860 is formed on the semiconductorlayer 828, as shown by FIG. 19A. According to the present embodiment,the patterned dielectric layer 860 is formed, for example, by aconventional PEP. A description of the relevant process technology isthe same as the description in the foregoing embodiment and thus notrepeated herein.

Thereafter, a conductive layer (not shown) is formed on thesemiconductor layer 828 to cover the patterned dielectric layer 860.Then, the conductive layer and the semiconductor layer 832 aresimultaneously patterned to form the current spreading layer 830 and thesemiconductor device layer 820, as shown by FIG. 19B. According to thepresent embodiment, the conductive layer 860 is formed by CVD,evaporation, sputtering or other suitable processes, for example.Moreover, the conductive layer and the semiconductor layer 832 arepatterned, for example, by a conventional PEP. A description of therelevant process technology is the same as the description in theforegoing embodiment and thus not repeated herein.

Next, referring to FIGS. 19B through 19F in sequence, since thefabricating method shown by FIGS. 19B through 19F is similar to thatshown by FIGS. 18D through 18H, a relevant description of the process isnot repeated.

According to the present embodiment, a traditional photo mask processand a lift-off process are adopted and coordinated with only one maskpatterning process to form the current spreading layer 830 and thesemiconductor device layer 820. Hence, the light emitting diode chip 800a may require only three PEPs to fabricate and thereby reduces thefabrication cost and the fabrication time.

The Eighth Embodiment

FIGS. 20A through 20D show a flowchart of fabricating a light emittingdiode chip according to the eighth embodiment of the present invention.First, a first type semiconductor material layer 922, a light emittingmaterial layer 924, a second type semiconductor material layer 926 and aconductive layer 932 are sequentially formed on a substrate 910 tofurther form a semiconductor layer 928 and a conductive layer 932 on thesemiconductor layer 928 respectively, as shown by FIG. 20A. Thesemiconductor layer 928 and the conductive layer 932 are formed, forexample, by MOCVD, MBE, evaporation, sputtering or other suitableepitaxial growth processes to sequentially form the material layers 922,924, 926 and the conductive layer 932 on the substrate 910. The presentembodiment is exemplified by an MOCVD process as an example forembodiment but not limited thereto. According to the present embodiment,the substrates 910 and 210 have the same material, and the materiallayers 922, 924 and 926 are the same as the material layers 222, 224 and226 in the foregoing embodiment. A relevant description thereof is thusnot repeated herein.

Afterwards, the semiconductor layer 928 and the conductive layer 932 arepatterned to form a semiconductor device layer 920 and a currentspreading layer 930 simultaneously, as shown by FIG. 20B. According tothe present embodiment, the semiconductor layer 928 and the conductivelayer 932 are patterned, for example, by a conventional PEP. Adescription of the relevant process technology is the same as thedescription in the foregoing embodiment and thus not repeated herein.

Then, a patterned dielectric layer 960 is formed on the currentspreading layer 930 and the semiconductor device layer 920, as shown byFIG. 20C. According to the present embodiment, the patterned dielectriclayer 960 is formed, for example, by a conventional PEP. A descriptionof the relevant process technology is the same as the description in theforegoing embodiment and thus not repeated herein.

Thereafter, a plurality of electrodes 972 is formed on the currentspreading layer 930 and the semiconductor device layer 920, as shown byFIG. 20D. According to the present embodiment, the electrodes 972 areformed, for example, by a conventional PEP. A description of therelevant process technology is the same as the description in theforegoing embodiment and thus not repeated herein. Up to this step, theprocess of a light emitting diode chip 900 is generally completed.

According to the present embodiment, in the process steps of the lightemitting diode chip 900, a PEP is performed to form the semiconductordevice layer 920 and the current spreading layer 930 simultaneously, andthen two PEPs are performed to fabricate the patterned dielectric layer960 and the electrodes 972 respectively. The patterned dielectric layer960 covered by the electrodes 972 is defined as the current blockinglayer, while the patterned dielectric layer 960 not covered by theelectrodes 972 is defined as the passivation layer. Therefore, onlythree PEPs are required to complete the fabrication of the lightemitting diode chip 900 and thereby reduces the fabrication time and thefabrication cost.

According to another embodiment, the patterned dielectric layer 960 hasanother mask pattern design, as shown by FIG. 21A. After completing theprocess steps as shown by FIGS. 20C and 20D, the light emitting diodechip 900 is formed as a light emitting diode chip 900 a, as shown byFIG. 21 B. A description of the relevant process technology is the sameas the description in the foregoing embodiment and thus not repeatedherein.

The Ninth Embodiment

FIGS. 22A through 22E show a flowchart of fabricating a semiconductordevice layer. First, a semiconductor layer 1200 is formed on a substrate1100. The semiconductor layer 1200 includes a first type semiconductormaterial layer 1220, a light emitting material layer 1230 and a secondtype semiconductor material layer 1240, as shown by FIG. 22A. Thesemiconductor layer 1200 consists of the material layers as described inthe first through eighth embodiments, for example. Relevant details onthe materials and processes are the same as those mentioned in theforegoing embodiments.

Afterwards, a patterned photoresist layer 1300 is formed on thesemiconductor layer 1200, as shown by FIG. 22B. According to the presentembodiment, a gray-tone mask process is performed to form the patternedphotoresist layer 1300 such that a surface 1300 a thereof has irregularshapes, as shown by FIG. 22B.

Afterwards, a plurality of etching processes is performed continuouslyuntil a thickness of the patterned photoresist layer 1300 is etched awaycompletely so that a semiconductor device layer 1400 is formed, as shownby FIGS. 22C through 22E. According to the present embodiment, theetching process is, for example, a dry etching process, a wet etchingprocess or other suitable etching processes. All of the foregoingprocesses are merely listed as examples and not meant to limit thepresent embodiment.

It should be noted that since the surface 1300 a of the patternedphotoresist layer 1300 has irregular shapes, after several etchingprocesses, a surface shape of the second type semiconductor layer 1240in the semiconductor device layer 1400 is rendered conformal with thesurface shape of the patterned photoresist layer 1300, as shown by FIG.22E.

Certainly, as the structure of the patterned photoresist layer 1300differs, as shown by the FIG. 22F, the surface of the first typesemiconductor layer 1220 of the semiconductor device layer 1400 may alsoform irregular shapes, as shown by FIG. 22G. It should be noted that theprocess steps of the semiconductor device layer 1400 may also be appliedto the first through the eighth embodiments.

The Tenth Embodiment

FIGS. 23A through 23C show a schematic flowchart of a mask process.First, a first patterned photoresist layer 2200 is formed on a substrate2100. The first patterned photoresist layer 2200 includes a firstphotoresist block 2210 and a second photoresist block 2220. A thicknessh1 of the first photoresist block 2210 is thinner than a thickness h2 ofthe second photoresist block 2220, as shown by FIG. 23A. According tothe present embodiment, the first patterned photoresist layer 2200 isformed, for example, by a half-tone mask process, a gray-tone maskprocess or a multi-tone mask process. The present embodiment isexemplified by a half-tone mask process as an example for embodiment butis not limited thereto. In addition, a film 2300 is further disposedbetween the substrate 2100 and the first patterned photoresist layer2200. The film 2300 may be a conductive layer or a dielectric layer.

Afterwards, a surface of the substrate 2100 is partially removed usingthe first patterned photoresist layer 2200 as a mask to form a firstpatterned substrate 2102, as shown by FIG. 23B. A first patternedsubstrate 2100 a is formed, for example, by a dry etching process, a wetetching process, or other suitable etching processes. All of theforegoing processes are listed as examples and not meant to limit thepresent embodiment.

Then, a thickness of the first patterned photoresist layer 2200 isreduced by a plasma ashing process until the first photoresist block2210 is removed completely. The remaining second photoresist block 2220partially exposes the first patterned substrate 2102, as shown by FIG.23C.

Next, the first patterned substrate 2102 is partially removed using theremaining second photoresist block 2220 as a mask to form a secondpatterned substrate 2104, as shown by FIG. 23D. According to the presentembodiment, a second patterned substrate 2104 is formed by a dry etchingprocess, a wet etching process, or other suitable etching processes, forexample. Up to this step, the process steps of the second substrate 2104are completed.

It should be noted that depending on different structures of the firstpatterned photoresist layer or different types of mask processes, thesubstrate may be formed as a substrate 2104 a with a protrusionstructure, a substrate 2104 b with a concave-convex structure, asubstrate 2104 c with an irregular surface, or a substrate 2104 d havinga combination of the foregoing, as shown by FIGS. 24A through 24D. It isto be noted that that the fabricating methods of the said substrates mayalso be applied to the substrates mentioned in the first through theninth embodiments.

In summary, the fabricating method of the light emitting diode chip asprovided in the present invention has at least the following advantages:First, a half-tone mask process, a gray-tone mask process or amulti-tone mask process is performed to reduce some process steps andcombined with a lift-off process to further reduce the process of thelight emitting diode chip. For example, the passivation layer and thecurrent blocking layer, the semiconductor device layer and the currentspreading layer, or a combination of the foregoing layers, are formedsimultaneously. Furthermore, in the present invention, a plurality ofcomponents is formed simultaneously by an identical process, which alsoreduces some steps in the process. In other words, the fabricatingmethod of the light emitting diode chip in the present invention reducesthe fabrication cost and the fabrication time.

It will be apparent to those skilled in the art that variousmodifications and variations can be made to the structure of the presentinvention without departing from the spirit and scope of the invention.In view of the foregoing, it is intended that the present inventioncover modifications and variations of this invention provided they fallwithin the scope of the following claims and their equivalents.

1. A method for fabricating a light emitting diode chip, comprising:forming a semiconductor layer and a dielectric layer sequentially on asubstrate; forming a first patterned photoresist layer on the dielectriclayer, wherein the first patterned photoresist layer comprises a firstphotoresist block and a second photoresist block, and a thickness of thefirst photoresist block is thinner than a thickness of the secondphotoresist block; removing a portion of the dielectric layer and aportion of the semiconductor layer with the first patterned photoresistlayer as a mask to form a semiconductor device layer; reducing athickness of the first patterned photoresist layer until the firstphotoresist block is removed completely and using the remaining secondphotoresist block as a mask to partially remove the dielectric layer toform a patterned dielectric layer, wherein the patterned dielectriclayer partially exposes the semiconductor device layer; removing theremaining second photoresist block; and forming a current spreadinglayer and a plurality of electrodes on the patterned dielectric layerand the semiconductor device layer.
 2. The method for fabricating thelight emitting diode chip as claimed in claim 1, wherein the currentspreading layer and the electrodes are fabricated by different maskprocesses respectively.
 3. The method for fabricating the light emittingdiode chip as claimed in claim 2, further comprising forming apassivation layer on the current spreading layer and the semiconductordevice layer not covered by the electrodes.
 4. The method forfabricating the light emitting diode chip as claimed in claim 2, whereinthe step of forming the current spreading layer and the electrodescomprises: forming the current spreading layer on the patterneddielectric layer and the semiconductor device layer; forming apassivation layer on the current spreading layer and the semiconductordevice layer; forming a second patterned photoresist layer on thepassivation layer; removing partially the passivation layer to form apatterned passivation layer with the second patterned photoresist layeras a mask, wherein the patterned passivation layer exposes a portion ofthe semiconductor device layer and a portion of the current spreadinglayer; forming an electrode material layer entirely; and removing thesecond patterned photoresist layer to strip the electrode material layerthereon and form the plurality of electrodes, wherein the electrodes areelectrically connected with the semiconductor device layer and thecurrent spreading layer.
 5. The method for fabricating the lightemitting diode chip as claimed in claim 2, wherein the step of formingthe first patterned photoresist layer comprises using a half-tone maskprocess, a gray-tone mask process or a multi-tone mask process.